| Abstract: | The selection of the right material for the mechanical stage of an electron beam lithography system is an important step in achieving the high accuracy required for submicron lithography. The material must be nonmagnetic, vacuum compatible, and strong enough for operation. It must possess mechanical properties to reduce static errors and dynamic errors, as well as electrical properties to minimize the E-beam deflection errors. After comparison of the most promising materials, silicon carbide is concluded to be the best material for an E-beam stage because of its low coefficient of thermal expansion, very high elastic modulus, light weight, and excellent hardness. Being semiconductive, it resolves both electric charge-up problems and beam deflection errors due to eddy current. |
