高取向PZT厚膜的0-3复合法制备

采用 0 3复合法 ,在Pt/Ti/SiO2 /Si衬底上成功制备了单层厚度 0 .9μm ,总厚度 10 μm ,并且无裂纹的Pb(Zr0 .53,Ti0 .4 7)O3铁电薄膜。溶液中粉体的存在减小了加热时的体积收缩 ,降低了制备过程中膜内部产生的应力 ,从而使得单层厚度可达 0 .9μm ,防止了薄膜开裂。X射线衍射分析表明薄膜为单一钙钛矿相结构且结晶状态良好 ,采用已烧结的粉末时 ,薄膜呈〈110〉取向 ;扫描电子显微镜分析表明 ,薄膜表面无裂纹 ;介电性能测试结果显示 ,其相对介电常数可高达 115 0。为了研究粉末的状态和薄膜取向之间的关系 ,将未经烧结的未结晶的PZT粉末加入前驱溶液中 ,在相同的制备条件下 ,可得沿〈10 0〉晶向强烈取向的PZT薄膜

Preparation of highly oriented PZT film by 0-3 composite method

Crack free PZT thick films with the single layer thickness and total thickness of 0.9 μm and 10μm, respectively, were successfully prepared by 0 3 composite method on Pt/Ti/SiO 2/Si substrate. The application of powders in the solution released the strain, which was raised in the film during firing process, and also reduced the volume shrink when the film was fired, so cracking was avoided effectively. The XRD and AFM observation showed that the PZT film exhibited full perovskite phase and no cracks were found. The relative dielectric constant of the film was as high as 1150 as measured. To derive 〈100〉 oriented thick PZT films, non crystallized PZT powders were used for the preparation of the PZT slurry and the powders crystallized during the annealing process, thus the powder's impact on the orientation of the films was avoided. Finally, thick PZT films with preferred orientation in the direction of the 〈100〉 plane were obtained.