Bi2-xSbxTe3热电薄膜的电化学沉积及表征

采用电化学沉积法，在ITO导电玻璃及钛片上沉积Bi2-xSbxTe3热电薄膜。采用循环伏安、SEM、XRD、EDX等技术分别对电化学沉积过程和薄膜的形貌、相结构、组成进行研究，并对其室温时的热电性能进行测试。结果表明，在含有Bi3＋、HTeO2+和SbO+的硝酸溶液中，采用控电位沉积模式，可以实现铋、锑、碲三元共沉积，得到Bi2-xSbxTe3薄膜。薄膜热处理前用冷等静压处理可以提高薄膜的密实度和平整度，并有利于热电性能的提高。

Electrochemical Deposition and Characterization of Bi2-xSbxTe3 Thermoelectric Thin Film

Bi2-xSbxTe3 thermoelectric films were deposited on ITO-coated glass and Ti sheet substrates by an electrochemical method. The deposition process and the morphology, phase structure and composition of the films were studied by cyclic voltammetry, SEM, XRD and EDX, respectively. The thermoelectric properties of the films were measured at room temperature. Results show that pure Bi2-xSbxTe3 films can be obtained on ITO-coated glass whereas the film grown on the Ti sheet contains a little amount of Te. The film has smoother and more compact surface with cold isostatic pressing before annealing. The electrical conductivity is greatly increased and the Seebeck coefficient almost does not change, which indicates that treating with cold isostatic pressing is an effective means to improve the thermoelectric properties of the films.