Low-threshold, high-temperature operation of 1.2 μm InGaAsvertical cavity lasers |
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| Authors: | Salomonsson F Asplund C Sundgren P Plaine G Mogg S Hammar M |
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| Affiliation: | Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista; |
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| Abstract: | The growth and characterisation of high performance InGaAs/GaAs quantum-well vertical cavity lasers with an emission wavelength of 1215 nm is reported. Continuous wave operation is demonstrated up to 105°C with a threshold current below 1 mA for T<80°C. For a 2.5 μm device the room temperature threshold current, output power and slope efficiency is 0.6 mA, 0.6 mW and 0.2 W/A, respectively |
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