Proposal and demonstration of multi-emitter HBTs |
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| Authors: | Imamura K. Takatsu M. Mori T. Bamba Y. Muto S. Yokoyama N. |
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| Affiliation: | Fujitsu Labs. Ltd., Atsugi; |
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| Abstract: | The authors have designed and tested InGaAs-InAlGaAs multi-emitter HBTs (ME-HBTs). The emitter electrodes of the transistor work as both an emitter and a base depending on their potential. A highly doped emitter layer was used for a low turn-on voltage for the collector current. Using an ME-HBT, the room-temperature operation of AND/NOR gates was tested |
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