InAIGaAs selective MOVPE growth with bandgap energy shift

We studied the bandgap energy shift by varying the SiO₂ mask width in selective MOVPE growth of InAIGaAs with almost no polycrystals on the masks. We found that the photoluminescence (PL) peak shifts toward the longer wavelength with wider mask width and narrower mesa width, where the In content is enhanced, and observed a maximum PL peak wavelength shift of 170 nm.