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Mo/Au Bilayers Deposited by Sputtering at Room Temperature for Transition Edge Sensors Fabrication
Authors:R Gonzalez-Arrabal  A Camón  M Parra-Borderías  L Fabrega  J Anguita  J Sesé  F Briones
Affiliation:(1) Instituto de Microelectrónica de Madrid, Centro Nacional de Microelectrónica, Consejo Superior de Investigaciones Científicas, 28760 Madrid, Spain;(2) Instituto de Ciencia de Materiales de Aragón, CSIC-Universidad de Zaragoza, 50009 Zaragoza, Spain;(3) Instituto de Ciencia de Materiales de Barcelona, Campus de la UAB, 08193 Bellaterra, Spain;(4) Instituto de Nanociencia de Aragón, Universidad de Zaragoza, 50009 Zaragoza, Spain
Abstract:We report on the fabrication and characterisation of Mo/Au bilayers which are intended to be used as high resolution cryogenic imaging spectrometers for next generation of X-ray Astrophysical observatories in space. Mo/Au bilayers have been deposited by sputtering at room temperature on Si3N4 bulk and membranes. The composition of the bilayers as well as their interfaces have been characterised by Rutherford Backscattering Spectroscopy (RBS). Results indicate absence of interdiffusion. Further structural characterization has been performed by X-ray diffraction and Atomic Force Microscopy. The transition temperature T c of the Mo/Au bilayers has been tuned by changing the Au layer thickness. Very sharp superconducting transitions have been observed with transition widths as small as 0.3 mK. These films look therefore extremely promising for the intended detectors, as well as for other applications in materials science and nanotechnology.
Keywords:Transition edge sensors  Superconducting device  X-ray detectors  Proximity effect  Thin-films  Bilayers  Sputtering deposition
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