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| 热压烧结ITO靶材物相组成与电子结构研究 | |
| 引用本文： | 马晓波,孙本双,钟景明,王东新,陈焕铭,张 伟.热压烧结ITO靶材物相组成与电子结构研究[J].稀有金属材料与工程,2013,42(1):126-130. |
| 作者姓名： | 马晓波 孙本双 钟景明 王东新 陈焕铭 张 伟 |
| 作者单位： | 1. 西北稀有金属材料研究院国家钽铌特种金属材料工程技术研究中心,宁夏石嘴山753000;宁夏大学,宁夏银川750021 2. 西北稀有金属材料研究院国家钽铌特种金属材料工程技术研究中心,宁夏石嘴山,753000 3. 宁夏大学,宁夏银川,750021 |
| 基金项目： | 宁夏回族自治区科技攻关项目 (2010~2012) |
| 摘 要： | 采用XRD、XPS对ITO固溶烧结前后物相结构及靶材表面In、Sn、O三元素价态进行表征和研究。结果发现:ITO固溶体中溶质与溶剂离子的半径差异较大是引发掺杂后XRD图谱谱峰偏移的主要原因;而XPS图谱中谱峰偏移则是Sn掺杂导致ITO导带中电子态占有率增加、Fermi能级升高的缘故。研究结果为制备成分、结构均匀的高密度ITO靶材提供了有益的参考。 |
| 关 键 词： | ITO靶材 热压烧结 X射线衍射谱 X射线光电子能谱 |
| 收稿时间： | 2012/1/10 0:00:00 |
Study on Electronic Structure and Component of Hot Pressing ITO Sputtering Target Materials |
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| Ma Xiaobo,Sun Benshuang,Zhong Jingming,Wang Dongxin,Chen Huanming and Zhang Wei.Study on Electronic Structure and Component of Hot Pressing ITO Sputtering Target Materials[J].Rare Metal Materials and Engineering,2013,42(1):126-130. | |
| Authors: | Ma Xiaobo Sun Benshuang Zhong Jingming Wang Dongxin Chen Huanming and Zhang Wei |
| Affiliation: | National Engineering Research Center of Tantalum & Niobium, Institute of Northwest Rare Metal Materials, Shizuishan 753000, China |
| Abstract: | The phase component and surface structure of ITO sputtering target materials fabricated by hot pressing method were characterized by X-ray diffraction and X-ray photoelectron spectroscopy. The results indicate that the peaks of XRD pattern were shifted, which can be explained to the great difference of ion radius between the solute and the solvent. On the other hand, the peak shift of core level in X-ray photoelectron spectrum was due to the increasing occupancy of the ITO conduction band and the increase of Fermi level when Sn was doped. The research is beneficial to fabricate ITO sputtering target material with homogeneous composition and structure and high density |
| Keywords: | ITO target materials hot pressing XRD XPS |
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