铜在含碘酸钾的CeO2浆料中CMP的抛光速率及影响因素的研究

研究了氧化剂碘酸钾及抛光粒子CeO2的浓度、抛光转速和抛光压力对铜的化学机械抛光速率的影响,并初步解释了影响因素的机理。实验表明在一定范围内材料的去除速率与抛光压力、抛光转速的关系可以用Preston方程的一般式R=KPαVβ来表示,并据此可得到α,β和K的值;而氧化剂和抛光粉浓度对抛光速率的影响无明确的规律。在0.2 mol/L KIO3+5%CeO2、压力11.703 kPa、转速25 r/min的条件下,铜去除速率为43.9 nm/min,抛光效果Ra=10.9 nm,Rmax=112 nm。

Polishing Rate and Dependent Factors of Copper in CeO2 Slurry Containing KIO3 during CMP

Dependence of removal rate of copper on oxidizer KIO3,CeO2 abrasives and polishing pressure,rotating rates were investigated,and the dependent mechanism were explained primarily.The results show that the relationship between the material removal rate and polishing pressure,rotative rates confirms the generalized forms of Preston's equation R=KPαVβ within some range,while rules of influence of concentration of oxidizer and abrasive on removal rates was not found clearly.In the condition of 0.2 mol/L KIO3+15% CeO2+11.703 kPa+25 r/min,the removal rate of copper was 43.9 nm/min,and Ra=10.9 nm,Rmax=112 nm.