Electrical characteristics of (<Emphasis Type="Italic">p</Emphasis>)3C-SiC-(<Emphasis Type="Italic">n</Emphasis>)6H-SiC heterojunctions |
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| Authors: | A A Lebedev A M Strel’chuk D V Davydov N S Savkina A N Kuznetsov L M Sorokin |
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| Affiliation: | (1) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia |
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| Abstract: | The electrical characteristics of (p)3C-SiC-(n)6H-SiC epitaxial heterostructures obtained by sublimation epitaxy in vacuum are studied. The band discontinuities are determined and the energy band diagram of the heterojunction is constructed. It is shown that the obtained heterostructure offers a promising material for high electron mobility transistors. |
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