Geometrical Characteristics and Surface Polarity of Inclined Crystallographic Planes of the Wurtzite and Zincblende Structures |
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Authors: | Hisashi Masui Samantha C Cruz Shuji Nakamura Steven P DenBaars |
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Affiliation: | (1) Solid State Lighting and Energy Center, Materials Department, College of Engineering, University of California, Santa Barbara, CA 93106-5055, USA |
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Abstract: | Inclined crystallographic planes of the wurtzite structure were investigated in comparison with the zincblende structure in
terms of surface geometry characteristics. The ball–stick model indicates that the semipolar surface possesses a surface polarity resembling the anion polarity, which agrees with the common experimental observations
of epitaxial growth preference for the cation-polarity surface over the surface. The wurtzite surface was found to share geometrical similarities with the zincblende {100} surface uniquely among the possible semipolar
planes. This finding encourages epitaxial growth on the plane of wurtzite semiconductors, e.g., GaN, with the potential of avoiding atomic step formations typically associated with
off-axis crystallographic planes. |
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Keywords: | Wurtzite zincblende semipolar orientation surface polarity |
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