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X-ray emission spectra and interfacial solid-phase reactions in Hf/(001)Si system |
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| Authors: | V. R. Galakhov E. Z. Kurmaev S. N. Shamin V. V. Fedorenko L. V. Elokhina J. C. Pivin S. Zaima J. Kojima |
| Affiliation: | a Institute of Metal Physics, Russian Academy of Sciences, Ural Division 620219 Ekaterinburg GSP-170, Russia b Centre de Spectrométrie Nucléare et de Spectrométrie de Mass bat 108 F-91405 Orsay Campus, France c Department of Crystalline Materials Science, School of Engineering Nagoya University, Furo-Cho, Chikusa-ku, Nagoya 464-01, Japan |
| Abstract: | High energy resolved X-ray emission spectroscopy with variable electron beam excitation is applied for the study of solid-phase reactions in the Hf/(001)Si system at different annealing temperatures. It is found that annealing at 700°C is accompanied by formation of HfSi. The HfSi2 phase is formed at 780°C. The formation of Hf silicides in depth is studied by measurements of Si L2,3 X-ray emission valence spectra under different accelerating voltages. The data obtained by means of X-ray emission spectroscopy are compared with those obtained by means of Rutherford backscattering and electron-probe microanalysis techniques. |
| Keywords: | Hafnium Silicides Interfaces X-ray emission |
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