| Effect of heat-treatment on the surface properties of gallium phosphide nanosolids by Raman spectroscopy |
| |
| 作者姓名： | ZHANG Zhaochun YUE Longyi GUO Jingkang |
| |
| 作者单位： | [1]School of Materials Science and Technology, Shanghai University, Shanghai 200072, China [2]Bioinformatics Research Center, Shanghai University, Shanghai 200072, China |
| |
| 摘 要： | Raman spectra of gallium phosphide （GAP） nanosolids （unheated and heat-treated at 598 and 723 K, respectively） were investigated. It was observed that both the longitudinal optical mode （LO） and the transverse optical mode （TO） displayed an asymmetry on the low-wavenumber side. The scattering bands were fitted to a sum of four Lorentzians which were assigned to the LO mode, surface phonon mode, TO mode, and a combination of Ga-O-P symmetric bending and sum band formed from the X-point TA ＋ LA phonons, respectively. Analysis of the characteristic of surface phonon mode revealed that the surface phonon peak of the GaP nanosolids could be confirmed. In the infrared spectrum of the GaP nanoparticles, we observed the bands on account of symmetric stretching and bending of PO2, as well as stretching of Ga-O The Raman scattering intensity arising from the Ga-O-P linkages increased as increasing the heat-treatment temperature.
|
| 关 键 词： | 半导体材料 纳米固体 拉曼光谱 磷化镓 |
| 收稿时间： | 2005-06-20 |
Effect of heat-treatment on the surface properties of gallium phosphide nanosolids by Raman spectroscopy |
| |
| ZHANG Zhaochun YUE Longyi GUO Jingkang.Effect of heat-treatment on the surface properties of gallium phosphide nanosolids by Raman spectroscopy[J].Rare Metals,2006,25(3):253-259. |
| |
| Authors: | ZHANG Zhaochun YUE Longyi GUO Jingkang |
| |
| Affiliation: | 1. School of Materials Science and Technology, Shanghai University, Shanghai 200072, China;2. Bioinformatics Research Center, Shanghai University, Shanghai 200072, China;1. Physique des Interactions Ioniques et Moléculaires, CNRS and Aix-Marseille Université (UMR7345), Campus Scientifique de Saint Jérôme, service 242, 13397 Marseille Cedex 20, France;2. Max-Planck-Institut für Plasmaphysik, Boltzmannstr. 2, 85748 Garching, Germany;3. Forschungszentrum Jülich GmbH, Institut für Energie- und Klimaforschung – Plasmaphysik, 52425 Jülich, Germany;1. Department of Petrochemical, Northeast Petroleum University, Qinhuangdao 066004, PR China;2. Department of Micro- and Nanotechnology, Technical University of Denmark, Kongens Lyngby 2800, Denmark;1. Fraunhofer Institute for Structural Durability and System Reliability LBF, Division Plastics, Schlossgartenstrasse 6, 64289 Darmstadt, Germany;2. SKZ – Das Kunststoff-Zentrum, Friedrich-Bergius-Ring 22, 97076 Würzburg, Germany |
| |
| Abstract: | Raman spectra of gallium phosphide (GaP) nanosolids (unheated and heat-treated at 598 and 723 K, respectively) were investigated. It was observed that both the longitudinal optical mode (LO) and the transverse optical mode (TO) displayed an asymmetry on the low-wavenumber side. The scattering bands were fitted to a sum of four Lorentzians which were assigned to the LO mode, surface phonon mode, TO mode, and a combination of Ga-O-P symmetric bending and sum band formed from the X-point TA + LA phonons, respectively. Analysis of the characteristic of surface phonon mode revealed that the surface phonon peak of the GaP nanosolids could be confirmed. In the infrared spectrum of the GaP nanoparticles, we observed the bands on account of symmetric stretching and bending of PO2, as well as stretching of Ga-O. The Raman scattering intensity arising from the Ga-O-P linkages increased as increasing the heat-treatment temperature. |
| |
| Keywords: | semiconductor materials nanosolids Raman spectrum gallium phosphide |
| 本文献已被 CNKI 维普 万方数据 ScienceDirect 等数据库收录！ |
|
