| X波段AlGaN/GaN HEMTs厂栅场板结构研究 |
| |
| 引用本文： | 王冬冬,刘果果,刘丹,李诚瞻,刘新宇.X波段AlGaN/GaN HEMTs厂栅场板结构研究[J].半导体技术,2008,33(10). |
| |
| 作者姓名： | 王冬冬 刘果果 刘丹 李诚瞻 刘新宇 |
| |
| 作者单位： | 中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029 |
| |
| 基金项目： | 国家重点基础研究发展计划(973计划)，中国科学院科研项目 |
| |
| 摘 要： | 基于SiC衬底成功研制X波段0.25um栅长带有г栅场板结构的AlGaN/GaN HEMT,对比T型栅结构器件,研究了г栅场板引入对器件直流、小信号及微波功率特性的影响.结果表明,г栅场板结构减小器件截止频率及振荡频率,但明显改善器件膝点电压和输出功率密度.针对场板长度分别为0.4、0.7、0.9、1.1 um,得出一定范围内增加场板长度,器件输出功率大幅度提高,并结合器件小信号模型提参结果分析原因.在频率8 GHz下,总栅宽1 mm,场板长度0.9um的器件,连续波输出功率密度7.11 W/mm,功率附加效率(PAE)35.31%,相应线性增益10.25 dB.
|
| 关 键 词： | AlGaN/GaNHEMTs г栅场板 截止频率 功率密度 |
Study on the X-Band F-Gate Field-Plate for AlGaN/GaN HEMTs |
| |
| Wang Dongdong,Liu Guoguo,Liu Dan,Li Chengzhan,Liu Xinyu.Study on the X-Band F-Gate Field-Plate for AlGaN/GaN HEMTs[J].Semiconductor Technology,2008,33(10). |
| |
| Authors: | Wang Dongdong Liu Guoguo Liu Dan Li Chengzhan Liu Xinyu |
| |
| Abstract: | Conventional T-shaped gate and ?-gate field-plated structures were demonstrated and compared to each other from DC, RF and microwave power characterization. The results show that due to Γ-gate field plate, degradation in the value of unity current gain frequency fT and maximum frequency of oscillation f<,max> are observed, but there is a significant improvement in knee-vohage and output power density.Also, 0.25 um gate-length AlGaN/GaN HEMTs with varying Γ-gate field-plate lengths of 0.4, 0.7, 0.9 and 1.1 um were fabricated on SiC substrates. With the increase of field-plate length within the optimum,output power density is improved dramatically, which is demonstrated by equivalent circuit analysis. At 8 GHz, a continuous-wave output power density is 7.11 W/mm with 35.31% power-added effieieney and 10.25 dB corresponding linear gain at V<,ds> =40 V for an 0.25um? mm device with field-plate length of 0.9 um. |
| |
| Keywords: | AlGaN/GaNHEMTs AlGaN/GaN HEMTs cut-off frequency power density |
| 本文献已被 万方数据 等数据库收录！ |
|
