| 基于PID技术的深能级光离化截面测试方法 |
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| 引用本文： | 王莹,李新化.基于PID技术的深能级光离化截面测试方法[J].半导体学报,2008,29(8):1585-1588. |
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| 作者姓名： | 王莹 李新化 |
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| 作者单位： | 安徽大学电子科学与技术学院，合肥 230009;中国科学院固体物理研究所 材料物理重点实验室，合肥 230031 |
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| 基金项目： | 安徽省高校青年教师科研项目 |
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| 摘 要： | 在分析GaN中深能级中心与入射光子问相互作用的基础上,提出了一种基于PID(prortional-integral-deriva-tive)技术的深能级中心光离化截面的测试方法.在针对分子束外延生长GaN材料的光离化截面测试中,使用该方法得到的测试结果同Klein等人报道的HEMTs器件中光离化谱吻合较好,表明基于PID技术的深能级中心光离化截面测试方法能够精确地测试GaN材料中深能级光离化截面.与现有技术相比,该方法的优点是操作方便、测试相对准确,可作为一种缺陷"指纹"鉴定的新方法应用于GaN材料的深能级研究中.
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| 关 键 词： | 光离化截面 深能级中心 |
| 修稿时间： | 4/12/2008 5:31:15 PM |
A New Photoionization Cross Section Measurement Technique Based on PID Control |
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| Wang Ying and Li Xinhua.A New Photoionization Cross Section Measurement Technique Based on PID Control[J].Chinese Journal of Semiconductors,2008,29(8):1585-1588. |
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| Authors: | Wang Ying and Li Xinhua |
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| Affiliation: | School of Electronic Science and Technology,Anhui University,Hefei 230009,China;Key Laboratory of Materials Physics,Institute of Solid State Physics,Chinese Academy of Sciences,Hefei 230031,China |
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| Abstract: | A new method based on proportional-integral-derivative(PID)control is proposed to measure photoionization cross sections in GaN materials by analysis of release and recaptures carriers of deep centers by incident light.The measurement results of photoionization cross sections on GaN by this method are consistent with the photoionization spectrum in HEMTs reported by Klein.These results indicate that the photoionization cross section technology based on PID control can measure precisely deep level photoioniz... |
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| Keywords: | PID |
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