The effect of gas phase growth parameters on the composition of InGaAs in the hydride VPE process |
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Authors: | D N Buckley |
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Affiliation: | (1) AT&T Bell Laboratories, 07974 Murray Hill, New Jersey |
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Abstract: | A 1.4-μm thick InGaAs layer exhibiting an x-ray diffraction linewidth of 18 arcs has been grown on an InP substrate. This is the best crystalline perfection ever reported for InGaAs, as far as the author
is aware. The effect of gas composition on lattice mismatch has been investigated for InGaAs layers grown under a variety
of conditions. An empirical equation has been developed which relates lattice mismatch(Δa/a) to metals ratio, mole fraction of AsH3 and mole fraction of HC1. Values of(Δa/a) calculated using this equation are in good agreement with experiment. The metals ratio for lattice match is shown to vary
linearly with the growth rate. This observation is shown to be consistent with mass transfer limitation in the gas phase.
As a further consequence, relationships between layer thickness uniformity and lattice mismatch uniformity and between growth
rate and gas composition are derived. |
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Keywords: | InP vapor phase epitaxy x-ray diffraction lattice mismatch composition |
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