| T形电极晶体管 |
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| 引用本文： | 张树丹 王因生. T形电极晶体管[J]. 固体电子学研究与进展, 1993, 13(2): 129-134 |
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| 作者姓名： | 张树丹 王因生 |
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| 作者单位： | 南京电子器件研究所 210016(张树丹，王因生，陈统华，谭卫东)，南京电子器件研究所 210016(熊承堃) |
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| 摘 要： | 叙述了一种制作双极型晶体管的T形电极结构自对准工艺。利用该工艺已研制成微波T形电极晶体管(TSET)。最高振荡频率为10GHz,截止频率为6GHz;在3.2GHz下,输出功率1.1W,功率增益6dB。
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| 关 键 词： | 微波双极型晶体管 T形电极 自对准 |
T Shape Electrode Transistor (TSET) |
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| Zhang Zhudan,Wang YinshengChen Tonghua,Tan Weidong,Xiong Chenkun. T Shape Electrode Transistor (TSET)[J]. Research & Progress of Solid State Electronics, 1993, 13(2): 129-134 |
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| Authors: | Zhang Zhudan Wang YinshengChen Tonghua Tan Weidong Xiong Chenkun |
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| Abstract: | A self-aligned technology for bipolar transistor with a T shape elec-trode structure has been proposed. Microwave TSET has been fabricated with 10 GHz maximum oscillation frequency and 6 GHz out-off frequency. The transistor has1.1 W output power and 6 dB power gain at 3. 2 GHz. |
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| Keywords: | Microwave Bipolar Transistor T Shape Electrode Self-Aligned |
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