一种P-GaN栅结合混合帽层结构的HEMT器件

为了进一步提升P-GaN栅HEMT器件的阈值电压和击穿电压，提出了一种具有P-GaN栅结合混合掺杂帽层结构的氮化镓高电子迁移率晶体管(HEMT)。新器件利用混合掺杂帽层结构，调节整体极化效应，可以进一步耗尽混合帽层下方沟道区域的二维电子气，提升阈值电压。在反向阻断状态下，混合帽层可以调节栅极右侧电场分布，改善栅边电场集中现象，提高器件的击穿电压。利用Sentaurus TCAD进行仿真，对比普通P-GaN栅增强型器件，结果显示，新型结构器件击穿电压由593 V提升至733 V,增幅达24%,阈值电压由0.509 V提升至1.323 V。

A HEMT Device with P-GaN Gate Bonded Hybrid Cap Layer Structure

A GaN high electron mobility transistor (HEMT) with a P-GaN gate coupled with a hybrid doped cap layer structure is presented to further improve the threshold voltage and breakdown voltage of P-GaN gate HEMT devices. The new device controlled the overall polarization effect by using a hybrid doped cap layer structure, which further depleted the two-dimensional electron gas in the channel region below the hybrid cap layer and raised the threshold voltage. The device also controlled the electric field distribution on the right side of the gate in the reverse blocking state, which enhanced the electric field concentration phenomenon at the gate edge, and raised the breakdown voltage of the device. Sentaurus TCAD simulation results reveal that the novel structure device''s breakdown voltage is boosted from 593 V to 733 V, a 24% increment, and the threshold voltage is boosted from 0.509 V to 1.323V, a 33% increment when compared with that of the common P-GaN gate enhanced device.