| 硅纳米晶粒基MOSFET存储器的荷电特征研究 |
| |
| 引用本文： | 施毅,袁晓利,吴军,杨红官,顾书林,韩平,郑有炓. 硅纳米晶粒基MOSFET存储器的荷电特征研究[J]. 电子学报, 2001, 29(2): 145-147 |
| |
| 作者姓名： | 施毅 袁晓利 吴军 杨红官 顾书林 韩平 郑有炓 |
| |
| 作者单位： | 南京大学物理系和固体微结构国家重点实验室,南京 210093 |
| |
| 基金项目： | 国家自然科学基金! (No .6970 60 0 4 )，江苏省自然科学基金! (No.BK990 4 9) |
| |
| 摘 要： | 本文研究了硅纳米晶粒MOSFET存储器的荷电特征.器件阈值电压偏移达1.8V以上,并随着沟道宽度的变窄而增加,而与沟道长度基本无关.同时,阈值涨落也随宽度的变窄而增大.在20~300K测量温度范围内,器件阈值偏移和电荷的存储特性几乎不随温度变化,说明荷电过程主要由直接隧穿决定.进一步,在最窄沟道器件中观察到单电荷的荷电过程.
|
| 关 键 词： | 硅纳米晶粒 存储器 MOSFET |
| 文章编号： | 0372-2112(2001)02-0145-03 |
| 收稿时间： | 2000-01-14 |
Charging Characteristics of MOSFET Memory Based on Si Nanocrystals |
| |
| SHI Yi,YUAN Xiao-li,WU Jun,YANG Hong-guan,GU Shu-lin,HAN Ping,ZHENG You-dou. Charging Characteristics of MOSFET Memory Based on Si Nanocrystals[J]. Acta Electronica Sinica, 2001, 29(2): 145-147 |
| |
| Authors: | SHI Yi YUAN Xiao-li WU Jun YANG Hong-guan GU Shu-lin HAN Ping ZHENG You-dou |
| |
| Affiliation: | Department of Physics & National Laboratory of Solid State Microstructures Nanjing University,Nanjing 210093,China |
| |
| Abstract: | The charging characteristics of the MOSFET memory based on Si nanocrystals with various channel dimensions are investigated in the temperature range of 20-300K.Large threshold voltage shifts up to 1.8V are obtained,being obviously dependent on the channel width,and independent of the channel length.It is experimentally found that the threshold voltage shift and charge retention characteristics are almost independent of temperature.Single electron/hole charge/discharge processes are observed in the device with the narrowest channel. |
| |
| Keywords: | silicon nanocrystal memory MOSFET |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《电子学报》浏览原始摘要信息 |
|
点击此处可从《电子学报》下载免费的PDF全文 |
|
