高温CMOS集成电路闩锁效应分析

本文详细地分析了LDD结构高温CMOS集成电路闩锁效应.文中提出了亚微米和深亚微米CMOS集成电路闩锁效应的模型.在该模型中,针对器件的尺寸和在芯片上分布情况,我们认为CMOS IC闩锁效应的维持电流有两种模式:大尺寸MOST的寄生双极晶体管是长基区,基区输运因子起主要作用;VLSI和ULSI中MOST的寄生双极晶体管是短基区,发射效率起主要作用.但是他们的维持电流都与温度是负指数幂关系.文章给出了这两种模式下的维持电流与温度关系,公式在25℃至300℃之间能与实验结果符合.

The Analysis of Latch Up Characteristics in High Temperature CMOS Integrated Circuits

The paper has analyzed Latch-up characteristics in high temperature CMOS integrated circuits.In this paper,we propose a latch-up effect model for submicron and deep submicron integrated circuits.We find there are two sub-models about CMOS integrated circuit Latch-up effect.The base width of a parasitic transistor is long in a big size MOS IC,and the base transport factor dominates.The device size is small in VLSI and ULSI.The base width of a parasitic transistor is shorter,and emission efficiency dominates.But their holding currents are all negative index number power about temperatures.The paper has given relations between holding current and temperatures from 25℃ to 300℃ range.The experiment results are essential agreement with the model that the paper has given.