| 硅基HgCdTe光伏器件的暗电流特性分析 |
| |
| 引用本文： | 岳婷婷 殷菲 胡晓宁. 硅基HgCdTe光伏器件的暗电流特性分析[J]. 激光与红外, 2007, 37(B09): 931-934 |
| |
| 作者姓名： | 岳婷婷 殷菲 胡晓宁 |
| |
| 作者单位： | [1]中国科学院上海技术物理研究所,上海200083 [2]中国科学院研究生院,北京100039 |
| |
| 摘 要： | 对硅基HgCdTe中波器件进行了变温电流电压特性的测试和分析。测量温度从30K到240K，得到R0对数与温度的1000／T的实验曲线及拟合结果。同时选取60K、80K及110K下动态阻抗尺与电压V的曲线进行拟合分析。研究表明在我们器件工作的温度点80K，零偏压附近主要的电流机制是产生复合电流和陷阱辅助隧穿电流。要提高器件的水平，必须降低陷阱辅助隧穿电流和产生复合电流对暗电流的贡献。
|
| 关 键 词： | 硅基 HgCdTe 变温 暗电流 |
| 文章编号： | 1001-5078（2007）增刊-0931-04 |
| 修稿时间： | 2007-07-01 |
Characterization Analysis of Dark Current in HgCdTe/Si Photodiodes |
| |
| YUE Ting-ting, YIN Fei, HU Xiao-ning. Characterization Analysis of Dark Current in HgCdTe/Si Photodiodes[J]. Laser & Infrared, 2007, 37(B09): 931-934 |
| |
| Authors: | YUE Ting-ting YIN Fei HU Xiao-ning |
| |
| Affiliation: | 1. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 ; 2. Graduated Schnol of Chinese Academy of Science, Beijing 100039, China |
| |
| Abstract: | The current-voltage characteristics via temperature of mid-wavelength HgCdTe/Si photodiodes were measured and analyzed. The temperature range was from 30K to 240K, and the characteristic of R0-1000/T was measured and analyzed. The R-V curve of 60K, 80K and 110K were modeled using different dark current mechanisms. The theoretical fitting of experimental data at 80K reveals the generation-recombination and trap-assisted tunneling current dominates for zero- and low-bias region. Reduction of generation-recombination and trap-assisted tunneling currents by selecting proper material and device technologies will improve our device performance. |
| |
| Keywords: | Si substrate HgCdTe variable temperature dark current |
| 本文献已被 维普 等数据库收录！ |
