| CMP抛光运动机理研究 |
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| 引用本文： | 靳永吉. CMP抛光运动机理研究[J]. 电子工业专用设备, 2005, 34(9): 37-41 |
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| 作者姓名： | 靳永吉 |
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| 作者单位： | 中国电子科技集团公司第四十五所,北京,东燕郊,101601 |
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| 摘 要： | 通过对硅晶片化学机械抛光过程中抛光运动机理的理论分析,研究了硅晶片的抛光运动特性,探讨了主要工艺参数对硅晶片化学机械抛光后晶片表面粗糙度和表面平整度、抛光均匀性的影响规律。
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| 关 键 词： | 化学机械抛光 粗糙度 平整度 抛光运动 片内非均匀性 片间非均匀性 |
| 文章编号： | 1004-4507(2005)09-0037-05 |
| 收稿时间： | 2005-08-14 |
| 修稿时间： | 2005-08-14 |
Study on Mechanism of CMP Polishing Motion |
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| JIN Yong-ji. Study on Mechanism of CMP Polishing Motion[J]. Equipment for Electronic Products Marufacturing, 2005, 34(9): 37-41 |
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| Authors: | JIN Yong-ji |
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| Abstract: | The characteristic of silicon wafer polishing motion is researched in this paper by theoretic analysis of polishing motion mechanism during silicon wafer CMP, and discuss the mechanism of silicon wafer CMP, Systematically analyze the effect of the main process parameters for surface roughness, flatness and uniformity of wafer post-CMP. |
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| Keywords: | CMP Roughness Flatness Polishing Motion WIWNU WTWNU |
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