Minority-carrier transport parameters in heavily doped p-typesilicon at 296 and 77 K |
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Authors: | Leu I.-Y. Neugroschel A. |
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Affiliation: | Dept. of Electr. Eng., Florida Univ., Gainesville, FL; |
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Abstract: | Minority-carrier electron lifetime, mobility and diffusion length in heavily doped p-type Si were measured at 296 and 77 K. It was found that a 296 K μn (pSi)≈μn (nSi) for N AA≲5×1018 cm-3, while μn (pSi)/μn (nSi)≈1 to 2.7 for higher dopings. The results also show that for NAA≲3×1019 cm-3, D (pSi) at 77 K is smaller than that at 296 K, while for higher dopings Dn (pSi) is larger at 77 K than at 296 K. μn (pSi) at 77 K increases with the increasing doping above NAA>3×1018 cm-3, in contrast to the opposite dependence for μn (nSi) in n+ Si |
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