Monolithically integrated InP-based front-end photoreceivers |
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Authors: | Zebda Y. Lai R. Bhattacharya P. Pavlidis D. Berger P.R. Brock T.L. |
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Affiliation: | Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI; |
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Abstract: | The performance characteristics of a monolithically integrated front-end photoreceiver, consisting of a photodiode and a MODFET amplifier, were analyzed and measured. A vertical scheme of integration was initially used to realize a photoreceiver circuit on InP consisting of an InGaAs p-i-n diode, an InGaAs/InAlAs pseudomorphic MODFET, and passive circuit elements. The device structures were grown by single-step molecular beam epitaxy with an isolating layer in between. The microwave performance of 1-μm-gate MODFETs in the circuit is characterized by fT=9 GHz, although identical discrete devices have fT=30-35 GHz. The degradation is due to additional parasitic capacitances present in this integration scheme. In spite of this disadvantage the bandwidth of the circuit is 2.1 GHz. Integration of the p-i-n diode with 1.0- and 0.25-μm-gate MODFETs has also been done in a planar scheme using regrowth, and receiver bandwidths of 6.5 GHz were measured. This value is comparable to that of hybrid circuits with InP-based devices |
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