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Influence of the Degree of Crystallinity on the Dispersion of the Optical Parameters of Ge2Sb2Te5 Phase-Change Memory Thin Films |
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| Authors: | Fedyanina M E Lazarenko P I Vorobyov Yu V Kozyukhin S A Dedkova A A Yakubov A O Levitskii V S Sagunova I V Sherchenkov A A |
| Affiliation: | 1.National Research University of Electronic Technology MIET, 124498, Moscow, Russia ;2.Ryazan State Radio Engineering University, 390005, Ryazan, Russia ;3.Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences, 119907, Moscow, Russia ;4.R and D Center of Thin-Film Technologies in Energetics, Ltd., 194021, St. Petersburg, Russia ; |
| Abstract: | Semiconductors - Abstract—Extensive studies of Ge2Sb2Te5 material are associated with the possibility of producing multilevel nonvolatile elements for high-speed integrated optical functional... |
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