高海拔地区儿童腺苷脱氨酶与免疫球蛋白水平分析

分别采用固相法和溶胶-凝胶(Sol-Gel)法制备了Ca_3Co_4O_9热电陶瓷靶材,对Ca_3Co_4O_9薄膜的成膜工艺及机制进行了分析与探讨,在此基础上,采用适当的靶材利用脉冲激光沉积(PLD)技术在(0001)晶向(c轴)的Al_2O_3衬底上生长了单相的Ca_3Co_4O_9薄膜.通过X-射线衍射(XRD)仪、金相显微镜及扫描电镜(SEM)等表征手段,研究了靶材与薄膜的制备工艺对热电薄膜的物相、显微结构及形貌的影响.用直流四探针法测定了靶材和薄膜电阻率与温度的关系,结果表明,薄膜具有明显的半导体特性.

Study on the Thermoelectric Thin Films of Ca_3Co_4O_9 Using Pulsed-laser Deposition Techniques

The thermoelectric ceramic target material of Ca_3Co_4O_9 was prepared by the solid reaction method and the Sol-Gel method. The technology and mechanism of synthesizing the thermoelectric thin films of the Ca_3Co_4O_9 were investigated. On this basis, by selecting the appropriate target, the thin films of the Ca_3Co_4O_9 were grown on (0001)-oriented (c-cut) Al_2O_3 substrates by the pulsed-laser deposition techniques (PLD). The effects of the target material and the preparation process on the phase, microstructure and morphology were analyzed by XRD, metallograph,SEM and so on. The temperature dependence of the resistivity was measured by a standard four probes method,The results showed that the thin films exhibited obviously semiconductor behavior.