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Induced effects of Cu underlayer on(111) orientation of Fe50 Mn50 thin films
引用本文:王蕾 王凤平 刘还平 吴平 邱宏 潘礼庆. Induced effects of Cu underlayer on(111) orientation of Fe50 Mn50 thin films[J]. 中国有色金属学会会刊, 2005, 15(2): 353-357
作者姓名:王蕾 王凤平 刘还平 吴平 邱宏 潘礼庆
作者单位:DepartmentofPhysics,UniversityofScienceandTechnologyBeijing,Beijing100083,China
摘    要:Effects of Cu underlayer on the structure of Fe50 Mn50 films were studied. Samples with a structure of Fe50 Mn50 (200 nm)/Cu(tcu) were prepared by rnagnetron sputtering on thermally oxidized silicon substrates at room temperature. The thickness of Cu underlayer varied from 0 to 60 nm in the intervals of 10 nm. High-vacuum annealing treatments, at different temperatures of 200, 300 and 400℃ for 1 h, respectively, on the Fe50Mn50 (200 nm)/Cu(20 nm) thin films were performed. The surface morphologies and textures of the samples were measured by field emission scan electronic microscope (FE-SEM) and X-ray diffraction(XRD). Energy dispersive X-ray spectroscopy (EDX) and Auger electron spectroscopy(AES) were used to analyze the compositional distribution. It is found that Cu underlayer has an obvious induce effect on (111) orientation of Fe50 Mn50 thin films. The induce effects of Cu on (111) orientation of Fe50 Mn50 changed with the increase of Cu layer thickness and the best effect was obtained at the Cu layer thickness of 20 nm. High-vacuum annealing treatments cause the migration of Mn atoms towards surface of the film and interface between Cu layer and substrate. With the increasing annealing temperature, migration of Mn atoms is more obvious, which leads to a Fe-riched Fe-Mn alloy film.

关 键 词:Fe50Mn50薄膜 铜底层 热氧化硅基 磁溅射法

Induced effects of Cu underlayer on (111) orientation of Fe50 Mn50 thin films
WANG Lei,WANG Feng-ping,LIU Huan-ping,WU Ping,Qiu Hong,PAN Li-qing. Induced effects of Cu underlayer on (111) orientation of Fe50 Mn50 thin films[J]. Transactions of Nonferrous Metals Society of China, 2005, 15(2): 353-357
Authors:WANG Lei  WANG Feng-ping  LIU Huan-ping  WU Ping  Qiu Hong  PAN Li-qing
Abstract:Effects of Cu underlayer on the structure of Fe50 Mn50 films were studied. Samples with a structure of Fe50 Mn50 (200 nm)/Cu(tCu) were prepared by magnetron sputtering on thermally oxidized silicon substrates at room temperature. The thickness of Cu underlayer varied from 0 to 60 nm in the intervals of 10 nm. High-vacuum annealing treatments, at different temperatures of 200, 300 and 400 ℃ for 1 h, respectively, on the Fe50 Mn50 (200 nm)/Cu(20 nm) thin films were performed. The surface morphologies and textures of the samples were measured by field emission scan electronic microscope (FE-SEM) and X-ray diffraction(XRD). Energy dispersive X-ray spectroscopy (EDX) and Auger electron spectroscopy(AES) were used to analyze the compositional distribution. It is found that Cu underlayer has an obvious induce effect on (111) orientation of Fe50 Mn50 thin films. The induce effects of Cu on (111) orientation of Fe50 Mn50 changed with the increase of Cu layer thickness and the best effect was obtained at the Cu layer thickness of 20 nm. High-vacuum annealing treatments cause the migration of Mn atoms towards surface of the film and interface between Cu layer and substrate. With the increasing annealing temperature, migration of Mn atoms is more obvious, which leads to a Fe-riched Fe-Mn alloy film.
Keywords:Fe50 Mn50 films  Cu underlayer  migration
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