异质结双极型晶体管的能带设计

化合物半导体的液相外延技术,特别是近年来分子束外延(MBE)和金属有机化合物化学气相渡积(MOCVD)技术的进展,为半导体新器件的发展提供了良好的工艺基础.本文分析和讨论了在上述工艺基础上双极型晶体管的能带设计.其中包括宽发射极、宽收集极和能带宽度的设计.讨论了异质发射结附近能带尖峰和基区中速度过冲之间的联系与设计要点.提出了Auger晶体管的概念以及在工艺上如何实现的具体结构.文章最后以微波低噪声双极型晶体营为例,给出了一个具体的能带设计图.

Energy Band Design for Heterojunction Bipolar Transistors

LPE, especially, MBE and MOCVD developed recentry nave offered an excellent technology basis for the development of new semiconductor devices. In this paper,the energy band design including a wide gap emitter, a wide gap collector and the width of the band gap are discussed under the technology basis. The relationship between a band spike in the vicinity of the heterojunction emitter and a ballistic electron motion in the base and the design principle of the baud spike are analysed. The concept of an Auger transistor and a concrete structure for the realization of the transistor in practice are proposed. Finally, as an example, an energy band diagram is presented for a microwave low noise GaAs heterojunction bipolar transistor.