Optical characteristics of InGaP/GaAs HPTs |
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| Authors: | Chung-Kun Song Sang-Hun Lee Kang-Dae Kim Jae-Hong Park Bon-Won Koo Do-Hyun Kim Chang-Hee Hong Yong-Kyu Kim Sung-Bum Hwang |
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| Affiliation: | Div. of Electr., Electron. & Comput. Eng., Dong-A Univ., Pusan; |
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| Abstract: | In this paper, we examined the optical characteristics of InGaP/GaAs heterojunction phototransistor (HPT) directly compared with AlGaAs/GaAs HPT for the first time. Because of its inherent good electrical properties, the InGaP/GaAs HPT produced a high optical gain of about 61 at VC=3 V, IB=2 μA, for an input optical power of 1.23 μW. This is 2.5 times as high as that of the AlGaAs/GaAs HPT. In the transient response, the InGaP/GaAs HPT was a little inferior to the AlGaAs/GaAs HPT. This is due to the longer time delay caused by the photo-generated hole accumulation at the interface of heterojunction. The extended response time can be overcome by using a small load resistance in conjunction with the advantage of the superior optical gain |
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