A verification of the physical reason for the current gain fall-off at high current levels

In this paper, starting from the theory of the base widening effect, it is demonstrated by a simple calculation that the critical current density of a collector followsT ^−1.3 law. And it is confirmed by experiment. We obtain from the temperature characteristics of the transistors. That the physical reason for the current gain fall-off at high current levels is the base widening effect.