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| Effects of growth temperature on μc-Si:H films prepared by plasma assistant magnetron sputtering | |
| 作者单位： | [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China; Nissin Electric-Dalian University of Technology Joint R&D Center, Dalian University of Technology, Dalian 116024, China [1] Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China [2] Nissin Electric-Dalian University of Technology Joint R&D Center, Dalian University of Technology, Dalian 116024, China [3], Dalian University of Technology, Dalian 116024, China |
| 基金项目： | supported by the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (No. 707015);University Innovative Research Team Project of Liaoning Province |
| 摘 要： | Hydrogenated microcrystalline silicon thin films (μc-Si:H) were deposited by plasma assistant magnetron sputtering in Ar-H2 gas mixture. The effects of growth temperature from 150 to 450 ℃ on properties of deposited Si films were investigated at two different hydrogen diluted gases with [H2]/([Ar]+[H2]) of 10％and 50％at 3 Pa. The crystallinity of Si films examined by Raman scattering exhibited higher degradation by lowering growth temperature from 250 to 150 ℃ in low hydrogen diluted gas of 10％ than that in high hydrogen diluted gas of 50％. The IR absorption band around 845 and 890 cm-1 as well as calculated concentration of bonded hydrogen showed more obvious decrease of samples deposited in low hydrogen diluted gas of 10％ than that in high hydrogen diluted gas of 50％. The optical band gasps of both groups of samples measured by ultraviolet-visible optical absorption were decreased with increasing temperature in both gas conditions. |
| 关 键 词： | microcrystalline silicon Raman scattering hydrogen-silicon bonding optical band gap |
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