Hot carriers' effects in short channel devices |
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Authors: | R. Petrova R. Kamburova P. Vitanov |
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Abstract: | Experimental evidence for the impact of hot holes injection under pulsed voltage stress on the device degradation are presented. The transconductance lowering was supposed to be caused by an increase of the interface states density near the drain region. A field effect mobility decrease and an increase of the surface scattering factor by an amount larger for the shorter channel lengths were observed. |
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