| 量子阱半导体激光器概述 |
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| 引用本文： | 常利民. 量子阱半导体激光器概述[J]. 半导体光电, 1991, 12(3): 276-280 |
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| 作者姓名： | 常利民 |
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| 作者单位： | 重庆光电技术研究所 重庆市永川 |
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| 摘 要： | 本文主要从量子理论中的电子波函数所满足的薛定锷方程出发,讨论了量子阱理论。进而介绍多量手阱激光器(MQWL)的重要特征之一——阈值电流密度随量子阱的数目变化的情况。
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| 关 键 词： | 量子阱激光器 半导体激光器 应变层 |
An Introduction to Quantum Well Semiconductor Lasers |
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| Chang Limin Chongqing Optoelectronics Research Institute Yongchuan,Chongqing. An Introduction to Quantum Well Semiconductor Lasers[J]. Semiconductor Optoelectronics, 1991, 12(3): 276-280 |
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| Authors: | Chang Limin Chongqing Optoelectronics Research Institute Yongchuan Chongqing |
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| Affiliation: | Chang Limin Chongqing Optoelectronics Research Institute Yongchuan,Chongqing 632163 |
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| Abstract: | The principle of quantum well is discussed based on the Schrodinger equation satisfied by the electron wave function frcm quantum theory.Further- more,one of the most important characteristics ef the multiple quantum well lasers,i.e.,the dependence of the threshold current density on the number of quantum well,is presented. |
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| Keywords: | Quantum well Laser Strained Layer Thrcshold Current Density |
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