n沟道4H-SiC MESFET研究

报告了4H-SiCMESFET的研制。通过对SiC关键工艺技术进行研究,设计出初步可行的工艺流程,并且制成单栅宽120μmn沟道4H-SiCMESFET,其主要直流特性为在Vds=30V时,最大漏电流密度Idss为56mA/mm,最大跨导Gm为15mS/mm;漏源击穿电压最高达150V;微波特性测试结果在fo=1GHz、Vds=32V时该器件最大输出功率7.05mW,在fo=1.8GHz、Vds=32V时最大输出功率3.1mW。

A Study of the n Channel 4H-SiC MESFET

The paper reported the manufacture of the 4H-SiC MESFET. We designed the feasible flowsheet through the pilot study of SiC key process technology, and fabricated n-channel 4H-SiC MESFET with 120 μm single gate periphery. At 30 V drain voltage, the maximum current density was 56 mA/mm,the maximum transconductance was 15 mS/mm. The breakdown voltage V_~ds of 150 V was measured. At f_o=1 GHz、V_~ds =32 V, the highest output power reached 7.05 mW,and at f_o=1.8 GHz、V_~ds =32 V, the maximum output power was ~3.01 mW.