The effects of N+ dose in implantation into 6h-sic epilayers |
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| Authors: | Tsunenobu Kimoto Akira Itoh Hiroyuki Matsunami Toshitake Nakata Masanori Watanabe |
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| Affiliation: | (1) Department of Electrical Engineering, Faculty of Engineering, Kyoto University, 606-01 Sakyo, Kyoto, Japan;(2) Ion Engineering Research Institute Corporation, Tsuda, 573-01 Hirakata, Osaka, Japan |
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| Abstract: | Ion implantation of nitrogen (N) into p-type 6H-SiC {0001} epilayers was investigated as a function of implant dose. Lattice
damage induced by implantation was characterized by Rutherford backscattering spectroscopy and Raman scattering. The damage
severely increased when the implant dose exceeds 1 x 1015 cm-2, and amorphous layers were formed at doses higher than 4 x 1015 cm-2. By high-temperature annealing at 1500°C, relatively high electrical activation ratios (≈50%) can be obtained in the case
of low-dose implantation (<1 x 1015cm−2). However, the electrical activation showed sharp decrease with increasing implant dose, which may be caused by the residual
damage in implanted layers. |
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| Keywords: | Electrical activation implant dose ion implantation Raman scattering Rutherford backscattering spectroscopy silicon carbide |
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