|
|||||
|
|
Study of avalanche breakdown and impact ionization in 4H silicon carbide |
|
| Authors: | A. O. Konstantinov Q. Wahab N. Nordell U. Lindefelt |
| Affiliation: | 1. ABB Corporate Research c/o IMC, Electrum 233, S-164 40, Kista, Sweden 2. ABB Corporate Research, c/o Link?ping University, IFM, S-581 83, Link?ping, Sweden 3. Industrial Microelectronics Center, Electrum 233, S-164 40, Kista, Sweden 4. ABB Corporate Research, S-721 78, V?ster?s, Sweden |
| Abstract: | Epitaxial p-n diodes in 4H SiC are fabricated with uniform avalanche multiplication and breakdown. Photomultiplication measurements were performed to determine electron and hole ionization rates. Theoretical values of critical fields and breakdown voltages in 4H SiC are calculated using the ionization rates obtained. We discuss ionization mechanisms in 4H SiC and make a comparison between silicon carbide and gallium nitride. |
| Keywords: | Blocking voltage critical field ionization rates junction breakdown SiC |
| 本文献已被 SpringerLink 等数据库收录！ | |