多孔低介电常数材料研究进展

摘要: 具有低介电常数的多孔材料适合于集成电路方面的应用.从组成与结构、制备方法和介电性能等方面,分别介绍了以无机材料、有机材料、无机/有机复合相为基体的多孔低介电常数材料,其介电常数分别可以降低至1.99、1.50、1.99.以有机材料为基体的多孔低介电常数材料的使用温度达到450 ℃；以无机材料为基体的多孔低介电常数材料的抗弯强度达到136 MPa.在获得低介电常数的同时,改善材料由于引入孔隙导致的材料力学性能下降、介电损耗升高等问题,可以进一步拓展材料的应用空间.

Research progress of porous materials with low dielectric constant

The porous materials with low dielectric constant are suitable for the applications in integrated circuits. From the aspects of composition and structure, preparation method and dielectric properties, this work introduced the porous low-dielectric-constant materials with different matrix such as inorganic materials, organic materials, inorganic and organic composite separately, whose dielectric constants can be reduced to 1.99, 1.50, 1.99, respectively. The using temperature of the porous low-dielectric-constant materials with organic matrix can reach 450 ℃. The flexural strength of the porous low-dielectric-constant materials with inorganic matrix can reach 136 MPa. The introduction of cave into the materials leads to the decrease of mechanical properties and the increase of dielectric loss. The effort to get a low-dielectric-constant and improve the above properties can broaden the application scope of the porous materials．