Photoreflectance study of Au-schottky contacts on n-GaN |
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Authors: | Wei Liu Ming-Fu Li Soo-Jin Chua Nakao Akutsu Koh Matsumoto |
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Affiliation: | (1) Center for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 119260, Singapore;(2) Nippon Sanso Co., Tsukuba Laboratories, 10 Ohkubo Tsukuba, 300-26 Ibaraki, Japan |
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Abstract: | Semi-transparent Au-Schottky contacts on n-GaN were fabricated and studied by room-temperature photoreflectance spectroscopy.
A significant difference was observed in the photoreflectance spectra before and after the evaporation of Au-Schottky contacts.
This can be interpreted due to the formation of Schottky barrier at the interface between Au and GaN. Furthermore, for the
higher doping sample, Franz-Keldysh oscillations were observed in the photoreflectance, which allowed the accurate determination
of Au-Schottky barrier height on GaN. |
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Keywords: | Franz-Keldysh oscillations (FKOs) gallium nitride (GaN) photoreflectance (PR) Schottky contact |
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