Carrier type- and concentration-dependent absorption and photoluminescence of ZnO films doped with different Na contents |
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Authors: | Z Zheng YF Lu ZZ Ye HP He BH Zhao |
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Affiliation: | State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People''s Republic of China |
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Abstract: | The electrical and optical properties of zinc oxide (ZnO) films doped with different Na contents and grown by pulsed laser deposition were investigated. Hall measurements witnessed the conductivity conversion from n-type to p-type with targeted Na doping content increased up to more than 1%. The photoluminescence intensity first decreased as the targeted Na content increased to 1%, while non-degraded and even enhanced PL intensity was observed in p-type ZnO:Na0.02 film. This photoluminescence enhancement was ascribed to enhanced radiative recombination with more acceptor (NaZn) introduced. The band-gap shift of ZnO:Nax films was related to the variation of carrier type and concentration. Band-gap shrinkage was adopted to explain the carrier type- and concentration-dependent band-gap shift of ZnO:Nax films. |
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