Effects of boron incorporation on the strain and photoluminescence properties of GaAsSb/GaAs quantum wells

Boron-containing GaAsSb/GaAs quantum wells (QWs) with different antimony (Sb) mole fractions were grown by low-pressure metal–organic chemical vapor deposition for the first time. The effects of boron incorporation on the performance of GaAsSb/GaAs QWs are discussed. For samples with low compressive strain, injection of triethylboron can enhance the Sb content and increase the compressive strain, although boron incorporation can lead to a reduction in strain. This effect was less for strained GaAsSb/GaAs QWs, so the compressive strain of these QWs did not vary. Room-temperature photoluminescence emission at 1116 nm with a full-width at half-maximum (FWHM) value of 56 meV was obtained for strained BGaAsSb/GaAs QWs.