A detailed comparative study on the main electrical parameters of Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes |
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Authors: | Umut Aydemir ?lke Ta?ç?o?lu ?emsettin Alt?ndal ?brahim Uslu |
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Affiliation: | 1. Department of Physics, Faculty of Arts and Sciences, Gazi University, Ankara, Turkey;2. Department of Chemistry Education, Faculty of Education, Gazi University, Ankara,Turkey |
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Abstract: | We have fabricated Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes (SBDs) to investigate the effect of organic interfacial layer on the main electrical characteristics. Zn doped poly(vinyl alcohol) (PVA:Zn) was successfully deposited on n-Si substrate by using the electrospinning system and surface morphology of PVA:Zn was presented by SEM images. The current–voltage (I–V) characteristics of these SBDs have been investigated at room temperature. The experimental results show that interfacial layer enhances the device performance in terms of ideality factor (n), zero-bias barrier height (ΦB0), series resistance (Rs), and shunt resistance (Rsh) with values of 1.38, 0.75 eV, 97.64 Ω, and 203 MΩ whereas those of Au/n-Si SBD are found as 1.65, 0.62 eV, 164.15 Ω and 0.597 MΩ, respectively. Also, this interfacial layer at metal/semiconductor (M/S) interface leads to a decrease in the magnitude of leakage current and density of interface states (Nss). The values of Nss range from 1.36×1012 at Ec—0.569 eV to 1.35×1013 eV?1 cm?2 at Ec—0.387 eV for Au/PVA:Zn/n-Si SBD and 3.34×1012 at Ec—0.560 eV to 1.35×1013 eV?1 cm?2 at Ec—0.424 eV for Au/n-Si SBD. The analysis of experimental results reveals that the existence of PVA:Zn interfacial layer improves the performance of such devices. |
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Keywords: | Au/n-Si SBD with and without PVA Series and shunt resistance Interface states Comparison of main electrical parameters |
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