Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing |
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| Authors: | T Lin RG Chen HQ Zhang C Li XJ Ma |
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| Affiliation: | 1. School of Automation and Information Engineering, Xi’an University of Technology, 710048 Xi’an, China;2. College of Applied Sciences, Beijing University of Technology, 100124 Beijing,China |
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| Abstract: | Quantum well intermixing (QWI) has been widely used in modifying the bandgap of semiconductor materials, post-growth; it has been investigated in fabricating non-absorbing mirror regions of laser cavities to improve output power. In this work, the QWI mechanism is briefly introduced. A concentration distribution function in multiple quantum wells is mathematically obtained for odd and even wells respectively. In addition, a 650 nm AlGaInP/GaInP quantum well wafer is fabricated by metal organic vapor phase epitaxy, and a series of quantum well intermixing experiments is accomplished by Zn impurity diffusions. Based on experimental data, a concentration distribution function is simulated and an inter-diffusion coefficient between Al and Ga is calculated. Finally, the effects of QWI on the inter-diffusion coefficient are discussed. |
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