Preparation and characterization of phosphorus-doped silicon nanocrystals in SiCx films |
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Authors: | Yuheng Zeng Ning Dai Qiang Cheng Junjun Huang Xingbo Liang Weijie Song |
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Affiliation: | 1. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, PR China;2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, PR China;3. Ningbo QL Electricals Co., Ltd. Ningbo 315800, PR China |
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Abstract: | Phosphorus (P)-doped silicon nanocrystals (Si-NCs) embedded in SiC matrix were prepared using magnetron sputtering and rapid thermal annealing with heavily P-doped Czochralski silicon as the doping target. The microstructure and electrical properties of the Si-NC thin films were characterized using transmission electron microscope, Raman spectroscopy and Hall measurement. It was observed that the microstructure changed from geometrically isolated Si-NCs to network Si-NCs with the annealing temperatures from 800 to 1200 °C. The evolution of microstructure led to the significant change of conductivity (10?6 - 101 S cm?1) in the Si0.85C0.15 thin films that possessing a fixed phosphorus concentration. A percolation threshold of crystalline-silicon (c-Si) content (30–40%) was found for the considerable increase of conductivity, where the carrier concentration dominated it. It suggested that the network Si-NCs not only increased the carrier mobility, but also boosted the carrier concentration. In addition, for the Si0.85C0.15 thin film with c-Si content above percolation threshold, the activate energy of conductivity could be lower than 70 meV and the work function lower than 4.10 eV. |
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