Characterization of vacuum evaporated CdTe thin films prepared at ambient temperature

Polycrystalline cadmium telluride (CdTe) thin films were prepared by vacuum evaporation on glass substrates at ambient temperature. X-ray diffraction pattern (XRD) showed that the films are polycrystalline with predominant zinc blend structure. A strong reflection from the (111) plane of the cubic phase was seen beside two weak reflections from the (220) and (311) planes of the same phase. Three very weak lines that are characteristic of elemental tellurium were also observed. The average grain size was estimated by using Sherrer's formula and found to be 24±1 nm. The scanning electron microscope (SEM) image showed a uniform surface with submicron grain size. The difference between grain size obtained from Sherrer's formula and that observed in the SEM micrograph means that each grain consists of a large number of smaller crystallites. The composition of the films was explored by using energy dispersive spectroscopy (EDS), which revealed that the surfaces of the films have excess tellurium. The transmittance was measured in the wavelength range λ=400–1100 nm and used to estimate the optical bandgap energy E_g which was found to be E_g=1.48±0.01 eV. The absorption coefficient was calculated and plotted against the photon's energy and tailing in the bandgap was observed. This tailing was found to follow the empirical Urbach rule. The width of the tail was estimated and related to localized states. The linear current–voltage (I–V) plots were used to find the resistivity ρ, where a value of ρ=2.10×10⁶ Ω cm was obtained.