Effect of tin content on the electrical and optical properties of sprayed silver sulfide semiconductor thin films |
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Authors: | R. Boughalmi A. Boukhachem I. Gaied K. Boubaker M. Bouhafs M. Amlouk |
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Affiliation: | 1. Unité de physique des dispositifs à semi-conducteurs, Faculté des sciences de Tunis, Tunis El Manar University, 2092 Tunis, Tunisia;2. Institut Préparatoire Aux Etudes d’Ingénieurs de Nabeul, Merazka, 8000 Nabeul, Tunisia;3. Unité de Recherche MA2I, Ecole Nationale des Ingénieurs de Tunis, Tunisia |
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Abstract: | Silver sulfide (Ag2S) thin films have been deposited on glass substrates by t spray pyrolysis using an aqueous solution which contains silver acetate and thiourea as precursors. The depositions were carried out at a substrate temperature of 250 °C. Structural studies by means of X-ray diffraction show that all tin (Sn)-doped Ag2S thin films crystallized in a monoclinic space group with noticeable changes in the crystallites' orientation. The discussion of some structural calculated constants has been made with Sn doping in terms of microhardness measurements. Moreover, the optical analysis via the transmittance, reflectance as well as the photocurrent reveals that the direct band gap energy (Egd) decreases (Egd varies from 2.34 to 2.16 eV) and the indirect band gap energy (Egi) increases (Egi varies from 0.98 to 1.09 eV) slightly as a function of Sn content. Electrical study shows that Sn doping changes the electrical conductivity and proves the thermal activation of electrical conduction. |
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Keywords: | XRD Hardness Spray pyrolysis technique |
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