p型ZnO薄膜制备的研究进展

ZnO是一种性能优异的"低温蓝光工程"宽带隙Ⅱ-Ⅵ族半导体材料,但因本征施主缺陷和施主杂质引起的自补偿效应等使ZnO很难有效地实现n型向p型导电的转变。为此,阐述了ZnO薄膜的p型掺杂机理,介绍了国内外研究者在抑制自补偿、提高受主掺杂元素固溶度及寻求合适的受主掺杂元素等方面p型ZnO薄膜的最新研究进展。研究表明:增加ZnO材料中N原子固溶度的各种办法如施主-受主共掺杂、超声雾化气相淀积及本征ZnO薄膜在NH3气氛下后退火等和选择IB族中的Ag为受主掺杂元素是实现ZnO薄膜p型导电的有效措施。期望通过本综述能为国内ZnO基器件应用的p型ZnO薄膜的制备提供新思路。

Research Progress in Fabrication of p-Type ZnO Films

Znic oxide(ZnO) is a versatile Ⅱ-Ⅵ group semiconductor material with a wide band-gap and is applied in low temperature and blue light devices.Owing to the self-compensation effect resulted from the native donor defects and impurity,the transformation from the n-type to p-type ZnO film is very difficult.Therefore the p-type doped mechanism of ZnO films is discussed,and the latest research progress in the fabrication of p-type ZnO films related to the restraint of self-compensation,the enhancement of the acceptor solid solubility in ZnO films,and the choice of proper acceptor elements is thoroughly reviewed.The research results demonstrate that the enhancement of N atoms solid solubility in ZnO films through the co-doping of donor and acceptor,ultrasonic spray pyrolysis deposition,the post-annealing intrinsic ZnO in NH3 ambient,and the choice of appropriate donor such as Ag atoms in group-IB elements are effective methods in the fabrication of p-type ZnO films.This paper provides valuable ideas for the realization of p-type ZnO materials in ZnO-based devices.