Microwave synthesis of worm-like SiC nanowires for thin electromagnetic wave absorbing materials

Thin thickness is always the pursuit of excellent electromagnetic wave absorbing materials. Herein, SiC nanowires with worm-like morphology were synthesized by microwave heating the mixture of expanded graphite and silica. The worm-like SiC nanowires exhibit an excellent microwave absorption ability at a thin thickness. With the filling ratio of SiC nanowires increases in the matrix, the dielectric loss and microwave absorbing ability are significantly enhanced; meanwhile the number of absorption peaks is gradually increased, and the absorption peaks also move toward a thinner thickness. When the nanowires filling ratio was 40?wt%, the minimum reflection loss reached down to ?35.2?dB and the effective absorption (RL?<??10?dB) bandwidth was 1.8?GHz?at a thickness of 1.3?mm. The possible growth mechanism of the worm-like SiC nanowires is that the intermediate reaction gas phases, SiO and CO, were confined in the relatively independent tiny pores of expanded graphite. This resulting in an excessive local gas phase pressure, which causes the nanowire growth direction changes randomly.