ITO‐coatings by reactive low‐voltage ion plating: film properties and plasma analysis

Transparent conductive oxides (TCO) are widely used materials for multifarious applications. According to today's state of knowledge, indium‐tin‐oxide (ITO) still offers the best electrical properties among numerous TCOs. However, ITO films produced by ion plating have only rarely been reported to be investigated. For most coating processes, ITO films need to be deposited under high temperature conditions (some 100 °C substrate heating) or require post‐deposition heat treatment in order to obtain high film quality. In this study, reactive low‐voltage ion plating (RLVIP) was used, which allows ‐ due to plasma assistance during the coating process ‐ deposition of ITO films at temperatures below 100 °C. Essential film properties, i.e. resistivity and optical transmission, were optimised by variation of arc current, gas pressure and deposition rate. These quantities ‐ particularly arc current and gas pressure ‐ have huge influence on the characteristics of the supporting plasma. This was shown by analysing the plasma with a mass‐spectrometric plasma monitoring system and with a Langmuir probe. In comparison with formerly studied coating materials (Ta₂O₅,Nb₂O₅,HfO₂), different plasma compositions regarding the presence of metal oxide ions were determined, which could be attributed to elemental and molecular energy properties (ionisation and binding energies).