Defect Chemistry and Electrical Properties of Thallium Oxide Single Crystals |
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Authors: | G P WIRTZ C J YU R W DOSER |
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Affiliation: | Department of Ceramic Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 |
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Abstract: | Ehdectrical resistivity and Hall voltage were measured between 4.2 and 300 K on T12O3 crystals annealehd at 550°C for 24 h under oxygen pressures of 2×104 to 107 Pa. The carrier concentration varied from 7.97×1020 to 5.08×1020 cm?3, the low-temperature Hall mobility from 131 to 189 cm2/V.s, and the Fermi level from 7.1×104 to 5.05×104 J/mol above the bottom of the conduction band as P 02 was increased from 2×104 to 107 Pa. The dependence of Fermi level on carrier concentration and P 0l was consistent with a parabolic density-of-states function describing the conduction band. Over the entire region of oxygen pressure investigated, Fermi-Dirac statistics were required to describe the dependence of carrier concentration on P 02. |
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