钽催化磁控溅射法制备GaN纳米线

利用磁控溅射技术通过氮化Ga2O3/Ta薄膜,合成大量的一维单晶纤锌矿型氮化镓纳米线.用X射线衍射、扫描电子显微镜、高分辨透射电子显微镜,选区电子衍射和光致发光谱对制备的氮化镓进行了表征.结果表明;制备的GaN纳米线是六方纤锌矿结构,其直径大约20～60 nm,其最大长度可达10 μm左右.室温下光致发光谱测试发现363 nm处的较强紫外发光峰.另外,简单讨论了氮化镓纳米线的生长机制.

Synthesis of GaN Nanowires with Tantalum Catalyst by Magnetron Sputtering

Single crystalline wurzite GaN nanowires were synthesized through ammoniating Ga2O3/Ta films by RE magnetron sputtering.The products were characterized by X-ray diffraction (XRD),scanning electron microscopy (SEM),high-resolution transmission electron microscopy (HRTEM),selected-area electron diffraction (SAED) and photoluminescence (PL).The results show that the nanowires have a hexagonal wurtzite structure with diameters ranging from 20 nm to 60 nm and lengths typically up to 10 μm.The PL spectrum exhibits a strong UV light emission at 363 nm.The growth mechanism of the crystalline GaN nanowires is discussed briefly.